(b) Experimental I-V data of HRS at higher temperatures (140 to 200 K). The good linear relationship between ln(I/V) and √V indicates that the electronic behavior of HRS can be predicted by utilizing Poole-Frenkel effect. Y coordinates of line were added with a constant to separate each line. https://www.selleckchem.com/products/ly2874455.html The V 1/2 in x-axis means √V in the (b), and it shows the good linear relationship between ln(I/V) and V 1/2 in the temperature range 140 to 200 K obviously. Conclusions The conductive filament rupture in RRAM RESET process can be attributed not only to joule heat generated by internal current flow through a filament

but also to the charge trap/detrapping effect. A new conduction mode is discussed from hopping conduction to Frenkel-Poole conduction with elevated temperature. This finding will help us understand the physical mechanism

of resistive switching deeply in RRAM application. Authors’ information PZ received his BS degree in Physics Geneticin and his PhD degree in optics from Fudan University, Shanghai, China, in 2000 and 2005, respectively. He is currently an associate professor in the School of Microelectronics, Fudan University. His Quisinostat chemical structure research interests include fabrication and characterization of advanced metal-oxide-semiconductor field-effect transistors, advanced memory devices, and graphene device. LY received his BS degree and the MS degree in microelectronics from Fudan University, Shanghai, China, in 2009 and 2012, respectively. He is currently a 28-nm Graphics Design Engineer in Huali Microelectronics Corporation, Shanghai. His research interests include low-power circuit, memory and device design, and fabrication for the cutting edge integrated circuit technology. QQS received his BS degree in Physics and his MS degree in microelectronics and solid state electronics from Fudan University, Shanghai, China, in 2004 and 2009, respectively. He is currently an associate professor in the School of Microelectronics, Fudan University. His research Buspirone HCl interests include fabrication and characterization

of advanced metal-oxide-semiconductor field-effect transistors, mainly high-k dielectric-based devices. He is also interested in design, fabrication, and characterization of advanced memory devices, such as resistive switching memory devices and Flash. PFW received his BS and MS degrees from Fudan University, Shanghai, China, in 1998 and 2001, respectively, and his Ph.D. degree from the Technical University of Munich, München, Germany, in 2003. Until 2004, he was with the Memory Division of the Infineon Technologies in Germany on the development and the process integration of novel memory devices. Since 2009, he has been a professor ins Fudan University. His research interests include design and fabrication of semiconductor devices and development of semiconductor fabrication technologies such as high-k gate dielectrics and copper/low-k integration.