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and drafted the manuscript. PQ offered technical supports. NZ, PQ, KW, HF, GG, RH, and DC participated in revising the manuscript. All authors read and approved the final manuscript.”
“Background Recently, ZnO nanocrystals (ZnO-NCs) have attracted a lot of interests because of their promising applications in optoelectronic devices, Chloroambucil such as light-emitting devices or UV photodetectors [1, 2]. The near-UV emission of ZnO-NC can also be utilized for efficient energy transfer to rare earth ions (e.g., Eu3+ and Er3+ ions) to obtain emission in the visible (for lighting) or in the near-infrared (for telecommunications) regions [3, 4]. In order to facilitate the energy transfer, the emission band from the excited ZnO must overlap with the absorption band of the rare earth ions. In our earlier work [3], for example, the ZnO films were doped with Cd ions to maximize the overlap between the emission of Cd-doped ZnO and the absorption of Eu3+ ions. We propose here the development and study of ZnO-NC embedded in a SiO2 matrix to have a broadband near-UV emission from ZnO to facilitate and optimize the energy transfer to rare earth ions without introducing doping ions such as Cd ions [3].

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