Phalakornkul JK, Gast AP, Pecora R: Rotational and translational dynamics of rodlike polymers: a combined transient electric birefringence and dynamic light scattering study. Macromolecules 1999, 32:3122–3135.CrossRef 86. Farrell D, Dennis CL, Lim JK, Majetich SA: Optical and electron microscopy studies of Schiller layer formation and structure. J Colloid Interface Sci 2009, 331:394–400.CrossRef
87. Fang XL, Li Y, Chen C, Kuang Q, Gao XZ, Xie ZX, Xie SY, Huang RB, Zheng LS: pH-induced this website simultaneous synthesis and AZD5582 mw self-assembly of 3D layered β-FeOOH nanorods. Langmuir 2010, 26:2745–2750.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions JKL synthesized the MNPs, carried out TEM analysis, and drafted the manuscript. SPY carried out DLS measurement and data analysis. HXC carried out DLS measurement
and data analysis. SCL participated in the design of the study and drafted the manuscript. All authors read and approved the final manuscript.”
“Background Resistive random access memory (RRAM) with a simple metal-insulator-metal structure shows promising characteristics in terms of scalability, low power operation, and multilevel data storage capability and is suitable for next-generation memory applications [1–4]. RRAM devices with simple structure and easy fabrication process that are compatible with high-density 3D integration  will be needed in the future. Nutlin-3a mouse Various oxide switching materials such as HfOx[6–9], TaOx[3, 10–15], AlOx[16–19], GdOx, TiOx[21–23], NiOx[24, 25], ZrOx[26–29], ZnO [30–32], SiOx, and GeOx[34–36] have been used in nanoscale RRAM applications. However, their nonuniform switching and poorly understood switching mechanisms are currently the bottlenecks for the design of nanoscale resistive switching memory. Generally, inert metal electrodes  and various interfacial methods are used to improve resistive switching memory characteristics. We previously reported polarity-dependent improved memory characteristics using
IrOx nanodots (NDs) in an IrOx/AlOx/IrOx-NDs/AlOx/W structure . However, improved memory performance using different high-κ oxide switching materials such as AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures has not been reported yet. Using different high-κ oxides in the same structure may reveal a unique way to design novel RRAM Thiamet G devices for practical applications. Electrical formation of an interfacial layer at the IrOx/high-κx interface is important to improve resistive switching memory characteristics. Using this approach, high-density memory could be achieved using an IrOx/AlOx/W cross-point structure, which we also report here. In this study, we show that the electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface in an IrOx/high-κx/W structure plays an important role in improving the resistive switching memory characteristics of the structure.