The InAs NWs are vertically aligned on the substrate surface and

The InAs NWs are vertically aligned on the substrate surface and have a homogeneous diameter distribution without tapering and metal droplets on the tops. Our NWs have a larger diameter, shorter length and less number density in comparison with InAs NWs

on Si, which are ascribed to the lack of dangling bond on the graphite surface. The growth was proposed to follow a VS growth mechanism. The surface collection of impinging indium adatoms is the dominant contribution see more to the axial growth for short NWs, while impinging adatoms on sidewalls and diffusion to the top of the NWs become dominant for the longer NWs. We have also shown that the resulting NWs have mixed pure ZB and WZ insertions. Acknowledgements The authors would like to thank the EPSRC (EP/C001699/1), Lancaster Impact Acceleration Account and the European Graphene Flagship Project for the financial support. References 1. Janssen T-J, Tzalenchuk A, Lara-Avila S, Kubatkin S, Fal’ko VI: Quantum resistance metrology using graphene. Rep Prog click here Phys 2013, 76:104501.CrossRef 2. Hoon YJ, Lee WH, Wu Y, Ruoff R, Fukui T: van der Waals epitaxy of InAs

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