The blue shift of the UV peaks from the near-band-edge emission of ZnO is consistent with the results from the transmittance spectra in Figure  5 and Figure  6. The intensity of the PL decreases strongly with increase of the Al concentration from 0% to 3.2% in the as-prepared AZO films. This is probably due to the introduction of the nonradiative recombination centers with increasing fraction of selleck kinase inhibitor the amorphous Al2O3 doping layers in AZO films. Figure 7 Room temperature PL spectra excited by a 266-nm laser for AZO films with different Al concentration.

ZnAl2O4 films selleckchem Starting ZnO/Al2O3 composite films with high fraction of Al2O3 layers were grown by ALD prior to synthesis of the ZnAl2O4 films by high temperature annealing process. ABT737 Figure  8 shows the dependence of the average growth per cycle on the ZnO/Al2O3 cycle ratio in the multilayers. The average growth per cycle of the composite films at ZnO/Al2O3 ratio of 1:2 and 1:1 is

smaller than the growth rate of pure ZnO and Al2O3 layers. The reason is that there is a strong etching of the pre-deposited ZnO layer during exposure ZnO surface to the TMA precursor in the ALD cycle of Al2O3, as discussed in detail in [18, 19]. The removal of the ZnO surface layer causes a reduction of average growth rate especially when the thickness of the ZnO sublayers reduces to several cycles. The influence of the surface etching of ZnO sublayer on the growth rate can be eliminated by increasing the thickness of the ZnO sublayer. This is observed by the strong increase of the average growth per cycle with increasing ZnO sublayer thickness from 1 to 10 cycles FER in Figure  8. The average growth rate is almost constant at around

1.75 Å/cycle during the ALD ZnO/Al2O3 multilayers when the ALD cycles of the ZnO/Al2O3 sublayers is above 10:1, which is close to the growth rate of pure ZnO (1.838 Å/cycle). Figure 8 Dependence of the growth per cycle of the ZnO/Al 2 O 3 composite films on the ZnO/Al 2 O 3 cycle ratio. Attention has been paid to select the starting specific ZnO/Al2O3 composite films with appropriate sublayer thicknesses for synthesizing pure ZnAl2O4 films. ZnO/Al2O3 multilayers with different ZnO/Al2O3 cycle ratios from 1:2 to 5:1 were grown by ALD and then subsequently annealed at 1,000°C for 0.5 h. Figure  9 shows the XRD patterns of the annealed samples with different ZnO/Al2O3 cycle ratios. The XRD patterns of the annealed composite films show (111), (222), and (333) peaks of ZnAl2O4 spinel structure for the ZnO/Al2O3 cycle ratios at 2:1, 1:1, and 1:2 respectively, indicating that only ZnAl2O4 films with spinel crystal structure are synthesized from these specific ZnO/Al2O3 starting multilayers by ALD. A competition process of the easy ZnO crystallization with the formation of crystalline ZnAl2O4 is observed with the increasing thickness of ZnO sublayer.